Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric
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Improved Electrical Properties of Ge p-MOSFET With HfO2 Gate Dielectric by Using TaOxNy Interlayer
The electrical characteristics of germanium p-metal– oxide–semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO2/TaOxNy are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO2 as gate dielectric, good interface properties, good transistor characteristics, and about...
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تاریخ انتشار 2014